Транзистор биполярный BLT81.115 NXP

RF Transistor , NPN, REEL 1K Transistor Type RF Bipolar Transistor Polarity NPN Collector-to-Emitter Breakdown Voltage 9.5V Continuous Collector Current Ic 500mA ft, Typ 900MHz Case Style SOT-223 Power, Dissipation Pd 2W Termination Type SMD External Depth 7.5mm External Length / Height 1.7mm Quantity, Reel 1000 Transistor s, No. of 1 Width, External 6.7mm Current Ic Continuous a Max 0.5A Current Ic Max 0.5A Current Ic av 500mA Current Ic hFE 300mA Efficiency 60% Min Hfe 25 Min Power Gain Gp 6dB Power, Load 1.2W Power, Ptot 2W SMD Marking BLT81 Supply Voltage 7.5V Voltage, Vcbo 20V Width, Tape 12mm