Энергонезависимая память H27U2G8F2CTR-BC HSI

FEATURES SUMMARY DENSITY 2Gbit: 2048blocks Nand FLASH INTERFACE NAND Interface ADDRESS / DATA Multiplexing SUPPLY VOLTAGE Vcc = 3.0/1.8V Volt core supply voltage for Program, Erase and Read operations. MEMORY CELL ARRAY X8: (2K + 64) bytes x 64 pages x 2048 blocks X16: (1k+32) words x 64 pages x 2048 blocks PAGE SIZE X8: (2048 + 64 spare) bytes X16:(1024 + 32spare) Words Block SIZE X8: (128K + 4K spare) bytes X16:(64K + 2K spare) Words PAGE READ / PROGRAM Random access: 25us (Max) Sequential access: 25ns / 45ns (3.0V/1.8V, min.) Program time(3.0V/1.8V): 200us / 250us (Typ) Multi-page program time (2 pages): 200us / 250us (3.0V/1.8V, Typ.) BLOCK ERASE / MULTIPLE BLOCK ERASE Block erase time: 3.5 ms (Typ) Multi-block erase time (2 blocks): 3.5ms/ 3.5ms (3.0V/1.8V, Typ.) SEQURITY OTP area - Sreial number (unique ID) Non-volatile protection option for OTP and Block0(Opt.) Hardware program/erase disabled during power transition